Assignment3 0305-221 Introduction to Micro/Nanolithography
Follow “Standard for Complete answer” for submitting all homework assignments.
1) Show the chemical structure for the following polymers and find an application for each:
a) Poly styrene
b) Poly methyl methacrylate
c) Poly tetra fluoroethylene
d) Poly hydroxystyrene
e) Poly vinyl phenol
2) List the components in the resist being used for lab and discuss how each component contributions to the functions of the photoresist.
3) Show the chemical reaction for the conversion of diazonaphthoquinone (DNQ) to indene carboxylic acid (ICA) when exposed to photons at g-line or i-line.
Two commercially available photoresists,
each coated at 1.10 um,
were exposed in a stepper, which delivers 50.0 mW/cm2
to the wafer. After
development, resist thickness values were measured. From the following
exposure data, plot characteristic curves and annotate plot with
resist type (positive or negative), contrast (gamma), thickness loss (tl) and sensitivity (Dp or E0).
|Thickness in Angstroms|
|Time [s]||Resist A||Resist B|