Emerging Devices Research Group

 

Mission:

  1. Development of non-classical CMOS structures to meet ITRS Roadmap needs
  2. Integration Development of CMOS with Novel Devices
  3. Development of  New Device Structures
  4. Technology Transfer to Industry

Projects:

  1. III-V and Ge Esaki Diodes on Si Substrates
  2. Integration of Resonant Interband Tunnel Diodes with CMOS

    a. Demonstrate a Tunneling SRAM circuit

    b. Demonstrate >100 oC PVCR of ~3

    c. Demonstrate multi-valued logic operation of CMOS/RITD circuitry

    d. Demonstrate proximity annealed Esaki Diodes at RIT.

  3. Development of Ultra-Thin Body Field Effect Transistors
  4. Development of Si-based waveguide structures

Team Members:

Faculty:

  1. Sean L. Rommel

  2. Santosh K. Kurinec

  3. Karl D. Hirschman

Graduate Students:

  1. Paul Thomas (MS Candidate Microelectronic Engineering)

  2. David Pawlik (Ph.D. Candidate Microsystems Engineering)

Former Graduate Students

  1. Stephen Sudirgo: MS 2003, Ph.D. 2006 (Intel corporation, NM)

  2. Branislav Curanovic: MS 2004 (now employed at IBM E. Fishkill)

  3. Keith Tabakman: MS 2003 (now employed at IBM E. Fishkill)

Former Senior Projects

  1. Raymond Krom: Proximity Annealed Esaki Diodes

  2. David Pawlik: Development of a FIBTET structure at RIT

  3. Mohammed Rahman: Ultra-thin Body finFETs