Seth Hubbard, Ph.D.

Assistant Professor

Department of Physics 

Microsystems Engineering

Golisano Institute for Sustainability

Home
Research Openings
Research Interests
Teaching
NanoPower Lab
Publications
Biography

Theses

April 2005 Metalorganic Vapor Phase Epitaxy (MOVPE) Growth and Characterization of III-Nitride Heterostructures for Application in Electronic Devices University of Michigan
January 1998 Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H-SiC Measured Using the Electron Beam Induced Current Method Case Western Reserve University
Archival Journal Articles
S.M. Hubbard, D. Wilt, S. Bailey, D. Byrnes, R. Raffaelle OMVPE Grown InAs Quantum Dots for Application in Nanostructured Photovoltaics Proc. of the IEEE World Conference on Photovoltaic Energy Conversion, 2006, page number pending
E. Cho, D. PavlidisG. Zhao, S.M. Hubbard, J. Schwank Improvement of CO sensitivity in GaN-based gas sensors IEICE Transactions on Electronics E89-C, 1047 (2006).
S.M. Hubbard, G. Zhao, D. Pavlidis, W. Sutton, E. Cho High Resistivity GaN Buffer Templates and their Optimization for GaN-Based HFETs J. Crystal Growth 284, 297-305 (2005).
S.M. Hubbard, G. Zhao, D. Pavlidis, W. Sutton, E. Cho Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by OMVPE Mater. Res. Soc. Symp. Proc. 831, E11.11.1 (2004).
G. Zhao and S.M. Hubbard, D. Pavlidis Yellow Luminescence Centers of GaN Jap. J. Appl. Phys. 43, 2471-2472 (2004).
S.M. Hubbard, D. Pavlidis, V. Valiaev, A. Eisenbach Metal-Organic Vapor Phase Epitaxy Growth and Characterization of AlN/GaN Heterostructures J. Elect. Mat. 31, 395-401 (2002).
S.M. Hubbard, D. Pavlidis, V. Valiaev, M.A. Stevens-Kalceff, I.M. Tiginyanu Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures Mat. Sci. Eng. B, B91-92, 336-340 (2002).
D. Cui and S.M. Hubbard, D. Pavlidis, A. Eisenbach, C. Chelli Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors Semicond. Sci. Technol. 17, 503–509 (2002).
G. Zhao, W. Sutton, D. Pavlidis, E. Piner, J. Schwank, S. Hubbard A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si IEICE Transactions on Electronics v E86-C, 2027 (2003).
V. V. Ursaki, I. M. Tiginyanu, V. V. Zalamai, S. M. Hubbard, D. Pavlidis Optical characterization of AlN/GaN heterostructures J. Appl. Phys. 94, 4813 (2003).
V.V. Ursaki, I.M. Tiginyanu, N.N. Syrbu, V.V. Zalamai, S. Hubbard, D. Pavlidis Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures Semicond. Sci. Technol. 18, L9–L11 (2003).
O. Yilmazoglu, D. Pavlidis, Y.M. Litvin, S. Hubbard, I.M. Tiginyanu, K. Mutamba, H.L. Hartnagel, V.G. Litovchenko, A. Evtukh Field emission from quantum size GaN structures Appl. Surf. Sci. 220, 46-50 (2003).
 I. M. Tiginyanu,  V. V. Ursaki, V. V. Zalamai, S. Langa, S.M. Hubbard, D. Pavlidis, H. Foll Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching Appl. Phys. Let. 83, 1551-1553 (2003).
V. V. Ursaki, I. M. Tiginyanu, P. C. Ricci, A. Anedda, S.M. Hubbard, D. Pavlidis Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation J. Appl. Phys. 94, 3875-3882 (2003).
A. Matulionis, J. Liberis, L. Ardaravicius, M. Ramonas, T. Zubkute˙, I. Matulioniene˙, L. F. Eastman, J. R. Shealy, J. Smart, D. Pavlidis, S.M. Hubbard Fast and Ultrafast Processes in AlGaN/GaN Channels Phys. stat. sol. (b) 234, 826–829 (2002).
B. Ferguson, S. Mickan, S. Hubbard, D. Pavlidis, D. Abbott Investigation of gallium nitride T-ray transmission characteristics Proceedings of SPIE 4591, 210 (2001).
I. M. Tiginyanu, A. Sarua, G. Irmer, J. Monecke, S. M. Hubbard, D. Pavlidis, V. Valiaev Frohlich modes in GaN columnar nanostructures Phys. Rev. B 64, 233317 (2001).
S. Mohammadi and S.M. Hubbard, C. Chelli, D. Pavlidis, B. Bayraktaroglu Photoluminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs Solid-State-Electronics 44, 739-46 (2000).
S.M. Hubbard, M. Tabib-Azar, C.M. Schnabel, S. Bailey Mapping of crystal defects and the minority carrier diffusion length in 6H-SiC using a novel electron beam induced current technique J. Appl. Phys. 84, 3986-92 (1998).
R. Raffaelle, J. Mantovani, R. Friedfeld, S. Bailey, S. Hubbard Electrodeposited CuInSe2 thin film devices Conference Record of the IEEE Photovoltaic Specialists Conference, p 559-562 (1997).

Conference/Meeting Oral Presentations

OMVPE Grown InAs Quantum Dots for Application in Nanostructured Photovoltaics Conference Record of the IEEE World Conference on Photovoltaic Energy Conversion, Waikola Village, Hawaii, 2006.
Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by OMVPE 2004 Materials Research Society Fall Meeting, Boston, MA, November 29 – December 3, 2004.
Electrical Characterization and Cathodoluminescence Microanalysis of AlN/GaN Heterostructures 2001 Defect-Recognition and Imaging Physics Conference, Rimini, Italy, September 24-28, 2001.
Growth and Characterization of AlN/GaN Heterostructures using low-pressure Organometallic Vapor Phase Epitaxy 2001 Electronic Material Conference, Univ. of Notre Dame, June 27-29, 2001.
Effect of crystal defects on minority carrier diffusion lengths in 6H SiC Conference Record of the IEEE Photovoltaic Specialists Conference (PVSC), 1997, p 975-978.