Journals

  • Sankha S. Mukherjee, and Santosh K. Kurinec, "A Stable SPICE Macro-model for Magnetic Tunnel Junctions for Applications in Memory and Logic Circuits," IEEE Transactions on Magnetics, vol. 45, no. 9, pp. 3260-3268, September 2009.
    (doi: 10.1109/TMAG.2009.2021263 )
  • Sankha S. Mukherjee, F. Bai, D. MacMahon, C.-H. Lee, S. K. Gupta, and S. K. Kurinec, "Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions," Journal of Applied Physics, vol. 106, no. 3, pp. 033906-1 - 033906-7, August 2009.
    (doi: 10.1063/1.3176501 )
  • Sankha S. Mukherjee, David MacMahon, Feiming Bai, Chih-Ling Lee, and Santosh K. Kurinec, "Study of boron diffusion in MgO in CoFeB|MgO film stacks using parallel electron energy loss spectroscopy," Applied Physics Letters, Vol. 94, no. 8, pp. 082110-1 - 082110-3, February 2009.
    (doi: 10.1063/1.3090035 )
  • Jonathan C. Sippel, Syed S. Islam and Sankha S. Mukherjee, “A physics-based analytical model of a GaN/AlGaN HEMT,” International Journal of RF and Microwave Computer-Aided Engineering, Vol. 17, Issue 3, pp. 254-264, March 2007.
    (doi: 10.1002/mmce.20219 )
  • Sankha S. Mukherjee and Syed S. Islam, "A novel double quantum well device for THz range frequency detection," Superlattices and Microstructures, Vol. 14, no. 1, pp. 56-61, Jan 2007.
    (doi: 10.1016/j.spmi.2006.11.003 )
  • N. Chakraborti, P. Mishra, A. Aggarwal, A. Banerjee and Sankha S. Mukherjee, "The Williams and Otto Chemical Plant re-evaluated using a Pareto-optimal formulation aided by Genetic Algorithms," Applied Soft Computing, Vol. 6, No. 2, pp. 189-197, January 2006.
    (doi: 10.1016/j.asoc.2005.10.002 )
  • Sankha S. Mukherjee, Syed S. Islam and R.J. Bowman, “An Analytical Model of SiC MESFETs Incorporating Trapping and Thermal Effects,” Journal of Solid State Electronics, Vol. 48, No. 10-11, pp. 1709-1715, October-November 2004.
    (doi: 10.1016/j.sse.2004.05.004 )
  • Sankha S. Mukherjee and Syed S. Islam, "Effects of Buffer Layer Thickness and Doping Concentration on SiC MESFET Characteristics," International Journal of High-Speed Electronics and Systems, Vol. 14, No. 3, pp. 890-896, September 2004.
    (doi: 10.1142/S0129156404003009 )

Conferences/Talks

  • Sankha S. Mukherjee, “Design and Fabrication of CoFeB|MgO|CoFeB spintronic Devices on Silicon,” Invited Talk, IBM T. J. Watson Research Center, 2009.
  • Sankha S. Mukherjee, Feiming Bai, and Santosh K. Kurinec, “Magnetic Tunnel Junctions: From Materials to Circuits,” The 32nd Annual EDS/CAS Activities in Western New York Conference, 2008.
  • Sankha S. Mukherjee and Syed Islam, “Large-Signal Modeling of SiC-Based RF MESFET,” International Semiconductor Device Research Symposium, 2005.
  • Sankha S. Mukherjee and Syed Islam, "A study on the properties of the depletion region of SiC MESFETs", Proc. IEEE Lester Eastman Conference on High Performance Devices, pp. 114-115, NY, 2004.
  • Jonathan C. Sippel, Syed S. Islam and S. S. Mukherjee, “A physics-based analytical model of a GaN/AlGaN HEMT incorporating spontaneous and piezoelectric polarization,” Proc. IEEE Canadian Conference on Electrical and Computer Engineering, pp. 1401-1404, 2004.
  • Sankha S. Mukherjee, Syed S. Islam and Robert J. Bowman, “An Analytical Model of SiC MESFETs Incorporating Trapping and Thermal Effects,” International Semiconductor Device Research Symposium, pp. 110-111, December 2003.
  • Sankha S. Mukherjee and Syed Islam, “Frequency Dependent Electrical Characteristics of SiC MESFETs,” Proc. of the 27 th Annual EDS/CAS Activities in Western New York Conference , p.10, November 2003.
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