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Numerical Methods (learn more)
A rigorous study of floating point arithmetic, numerical techniques for finding roots of nonlinear equations, interpolations and approxi- mation of functions, approximations of definite integrals and numerical solutions to initial boundary value problems for ordinary differential equations with a study of the errors produced. This course requires independent study of certain topics that are not covered in the class lectures. Software packages such as MATLAB will be utilized.
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Introduction to Theoretical Methods (learn more)
The following topics shall be covered: quantum statistics, infinite and power series, complex numbers, linear equations, partial differential equations, multiple integrals vectro analysis, fourier series, ordinary differential equations, calculus of variations, coordinate transformations, tensor analysis, gamma, beta and error functions, series solutions of differential equations, partial differential equations, functions of a complex variable, integral transforms and probability.
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Introduction to Materials Science
Introduction to atomic structure, and arrangements, imperfections, atom and ion movement, diffusion, mechanical properties of metals, fracture mechanics, strain hardening and annealing, solid solutions, phase diagrams, phase transofrmations, corrosion and degredation of materials.
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Microelectromechanical Systems
This course will provide an opportunity for students to become familiar with the technology and applications of microeletromechanical systems (MEMS)--one of the fastest growing areas in the semiconductor business. MEMS represents the integration of microelectronic chips with microsensors, probs, lasers, and actuators. Topics include basic principles of MEMS and fabrication methodologies. The accompanying laboratory will carry out design and fabrication of MEMS structures/devices using microfabrication techniques.
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Microelectroncis II
The fundamental silicon based processing steps introduced in 0305-350 are expanded upon to cover state-of-the-art issues such as thin oxide growth, atomistic diffusion mechanisms, advanced ion implantation and rapid thermal processing (RTP). Physical vapor deposition (PVD) to form conductive and insulating films is introduced. MOS capacitance voltage measurement and surface change analysis are studied. These topics are essential for understanding the fabrication of modern IC's. Computer simulation tools (i.e. SUPREM) are used to model processes, build device structures, and predict electrical characteristics, which are compared to actual devices that are fabricated in the associated laboratory.
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Microelectroncis I (learn more)
This course introduces the beginning graduate student to the fabrication of solid-state devices and integrated circuits. The course presents an introduction to basic electronic components and devices, layouts, pattern transfer technology, and unit processes common to all IC technologies such as substrate preparation, oxidation, diffusion and ion implantation. The course will focus on basic silicon processing. The students will be introduced to process modeling using a simulation tool, Silvaco Athena software. This class is also accompanied with a laboratory section. The lab consists of conducting a basic metal gate PMOS process in the RIT clean room facility to fabricate and test a PMOS integrated circuit test chip.
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Microelectroncis III (learn more)
This course focuses on the deposition and etching of thin films of conductive and insulating materials for UIC fabrication. A thorough overview of vacuum technology is presented to familiarize students with the challenges of creating and operating in a controlled environment. Chemical Vapor Deposition (CVD) and eletroplating tehcnologies are discussed as methods of film deposition. Plasma etching and Chemical Mechanical Planarization (CMP) are studied as methids for selective removal of materials. Applications of these fundamental thin film processes to IC manufacturing are presented. Associated is a laboratory for on campus (01) and a graduate paper for distance learning (90). Labs include: vacuum pump-down and evaporation, dc sputtering, reactive magnetron sputtering, chemical mechanical planarization.
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Quantum Mechanics II (learn more)
Quantum Mechanics II focuses on the extension of non-relativistic quantum mechanics to three-dimensions, with applications to atoms and molecules, as well as their basic interactions with fields. It is assumed that the student is already familiar with basic quantum mechanics in one dimension (i.e.,
* Problems with Two and Three Degrees of Freedom
* Angular Momentum
* Central Potential/Two-Body Problems in Three Dimensions; Hydrogen Atom
* Elementary Theory of Radiation; Selection Rules
* Scattering, Cross-Sections, Partial-Wave Analysis
* Elements of Matrix Mechanics; Spin Angular Momentum
* Charged Particle with Spin in a Magnetic Field: Precession, Zeeman Effect, Magnetic Resonance
* Indistinguishable Particles: Bosons, Fermions, Pauli Exclusion Principle
* Time-Dependent Perturbation Theory and Fermi's Golden Rule: Applications to Atoms and Fields
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Micro Optics
This course focuses on silicon-based optical systems. The course introduces students to the following topics.
1. Wave propagation,
2. Diffraction,
3. Fourier optics,
4. Theory of diffractive optics,
5. Analysis, modeling and design of micro-optical devices,
6. Micro-optical devices fabrication techniques,
7. Micro-Optics applications in microsystems.
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Advanced Microphotinics
This course covers the latest advances in the field of microphotonics as published in the current literature. Subjects covered will include: silicon photonics as applied to light generation, detection and guiding, photonic crystals and microring resonators. The class format will be based on reviewing, analyzing and critiquing recent published research results in this field. Active student participation is required.
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Micro/Nano Characterization
This mechanical elective with weekly lab component focuses on tools and techniques for micro- and nano-characterization of materials, surfaces and thin films. The course covers the principles and applications of four experimental techniques: quantitative imaging, x ray diffraction, scanning probe microscopy, and micro- and nano- indentation. Students will learn the physics of interaction processes used for characterization, quantification and interpretation of collected signals, and fundamental detection limits for each technique.
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Solid-State Physics
The structure of solids and their thermal, mechanical, electrical and magnetic properties.
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Systems Engineering
An introduction to systemic thinking, systems architecture, and systems analysis with a focus on devices that are integrated into the larger systems. Systems engineering, systems architecture and product development processes are introduced and applied in a term-long project centered on a device of the student's choosing. Students identify customer requirements, translate them to critical design parameters, define a system architecture, then analyze the behavior, design windows, reliability and life-cycle cost trade-offs.
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Thesis
An independent engineering project or re-search problem to demonstrate professional maturity. A formal written thesis and an oral defense are required. The student must obtain the approval of an appropriate faculty member to guide the thesis before registering for the thesis. A thesis may be used to earn a minimum of 6 credits and a maximum of 12 credits. The usual is 9 credits.
A Physics-Based Model of SiC-Based MESFETs
Abstract: Silicon Carbide (SiC) has been investigated as an alternative material to Silicon (Si) for enhancing the power-handling capability of semiconductor devices for simultaneous high-temperature and high frequency applications. Its high thermal conductivity, high bandgap, low permittivity, high saturation velocity, moderate mobility, material hardness and chemical inertness make it a prime candidate for power electronics, heat and light sensors, and MEMS applications. The MESFET is the most viable power transistor based on SiC. The performance of SiC MESFETs is limited by trapping and thermal effects.
A physics-based analytical model of the SiC MESFET incorporating trapping and thermal effects is reported. The model takes into account the field and temperature dependencies of carrier transport parameters and carrier trapping effects. Both surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The trapping and detrapping from surface traps control the channel opening at the drain end of the channel that requires the drain resistance to be gate and drain voltage dependent. The substrate traps capture channel electrons at high drain bias when the buffer layer is fully depleted resulting in current collapse at low drain bias in the following I-V trace. The detrapping of the captured electrons is initiated with the increasing drain bias and the channel electron concentration increases which is accelerated by increased thermal effects. As a result, restoration of collapsed drain current is obtained before the trapping effect is reinitiated at high drain bias. The calculated results using the current model are in good agreement with experimental data.
A small-signal model for the MESFET has also been proposed. Calculations for the output conductance, the transconductance, the gate-source and gate-drain capacitance has also been presented.
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Microfluidic Microsystems
A graduate course designed to explore microfluidic principles and technologies. The course begins with an overview of microfluidic technology to provide a framework and to clarify the relationship of microfluidics to microelectromechanical systems (MEMS) and microsystems in general. Threee major topics comprise of the course:
(a) selected elements of fluid dynamic theroy, and the scaling and application of the application of that theory to microscale dimensions,
(b) design, fabrication and characterization of microfluidic deivices and microsystems, including exploration of major alternative fabrication technologies,process integration and material issues, and device- and system-level packaging/encapsulation challenges, and
(c) applications, including microvalves, micropumps and microflow sensors, and devices fo chemical and biochemical analysis
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High-Performance Semiconductor Devices
This course deals with the basic properties and device physics of III-IV materials, metal-semiconductor contacts, two-terminal heterojunction devices, heterojunciton bipolar transistors (HBT), Metal-Semiconductor Field Effect Transistors (MESFET) and high-electron mobility transistors (HEMT)
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Advanced Analog IC Design
An advanced course in analog integrated circuit design. Students will study bipolar and MOS realization of operational amplifiers, analog multipliers, A to D and D to A convertors, switched capacitor filters, and more. The students will participate in design projects including circuit design, layout, and SPICE simulation.
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Digital System Design with VHDL
This course deals with the practical aspects of digital design using the IEEE-standard VHSIC Hardware Description Language (VHDL) and a modern commercial development system. The course begins with a brief summary of the syntax of VHDL followed by several examples of hardware modeling. Simulation of VHDL models with text benches is discussed and the applications of VHDL to top down design methodology are presented. Two projects will be required. The first is primarily to attune the student to the VHDL development system while the second is a real subsystem designed and implemented on programmable devices. The course will be supported by the Altera-VHDL software and hardware and/or by the Xilinx-VHDL hardware and software
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Analog IC Design
A course in the analysis and design of bipolar analog integrated circuits. Topics include: device models, amplifiers, current sources and active loads, output stages, operational amplifiers, precision reference design, and analog circuit design in bipolar LSI. Course will involve circuit design and computer simulation projects.
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Physics and Scaling of CMOS Devices
An advanced-level course on MOSFET's and submicron CMOS devices. Topics include: MOS capacitors, gated diodes, long channel MOSFET, subthreshold conduction and offstate leakage, short channel effects, ion-implanted channels, buried-channel PMOS, CMOS scaling and structural design of submicron CMOS, advanced well technologies and latch-up immunity, CCD's and memory devices (EPROM's, EEPROM's including Flash EEPROM's, SRAM's, DRAM's.)
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Matrix Methods in EE
This course is required of all graduate students. It deals with the elements of linear algebra and states variables as applied to continuous and discrete-time systems. Topics include linear vector spaces, matrices, matrix transformations, Cayley-Hamilton theorem, state variables, canonical realizations of state equations, state transition matrix, solution of state equations, stability analysis and applications
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Random Signals and Noise
In this course, the student is introduced to random variables and stochastic processes. Topics covered are: probability theory, conditional probability and Bayes theorem, discrete and continuous random variables, distribution and density functions, moments and characteristic functions, functions of one and several random variables, Gaussian random variables, and the central limit theorem, estimation of a random variable, random processes, stationarity and ergodicity, autocorrelation, cross-correlation and power spectrum density, response of linear systems to stochastic inputs, introduction to linear prediction, Wiener filtering, elements of detection, matched filters.
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Principles of Robotics
An introduction to a wide range of robotics-related topics, including but not limited to: sensors, interface design, robot devices and applications, mobile robots, intelligent navigation, task planning, coordinate systems and positioning, image processing, digital signal processing applications on robots, and controller circuitry design. Prerequisite of the class in the basic understanding of signals and systems, matrix theory, and computer programming. Software assignments will be given to the students in robotic applications. Students will prepare a project, in which they will complete software or hardware design of an industrial or mobile robot. There will be two-hour lab additional to the lectures.
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