List of Publications authored by Santosh Kurinec

 

Patents

"Method of Fabricating an Ultra High Resolution Three Color Screen", Pat. No.5,582,703, Dec 1996. E.Sluzky,  Hesse, L. Ternullo, and   S. Kurinec

 

Discovery

Powder Diffraction Files Card PDF #521764 . Released based on the discovery in identifying of the crystal structure of zinc tantalum oxide, paper: S. Kurinec et al., J. Mater. Res., 15, 1320 (2000) [PDF]   

 

Textbook Chapters Authored

 

“Bipolar Transistors”, "Metal-Oxide-Semiconductor FETs", "Complementary MOS (CMOS)", Encyclopedia of Materials: Science and Technology, Ed. K. H.J.  Buschow, R.W. Cahn, M.C. Flemings, B. Ilschner, E.J. Kramer and S. Mahajan, Elsevier Science, UK 2001

 

"Junction Field Effect Transistors", "Metal-Oxide-Semiconductor FETs", "Complementary MOS (CMOS)", Encyclopedia of Advanced Materials, Ed. B. Bloor, R.J. Brook, M.C. Flemings, S. Mahajan, Pergamon Press, UK 1994.

 

University News

 “A Valuable Resource for Semiconductor Industry:  Microelectronic Engineering @ Rochester Institute of Technology”, Santosh K. Kurinec, MEPTEC REPORT, September/October 2002, p. 9

 

Selected Publications

 

1.          On the Gate-to-Channel Parasitic Capacitance in Si Passivated Relaxed Ge-on-Si pMOSFETs, R. Krom III, J. Mitard, B. De Jaeger, G. Eneman, M. Meuris, M. Heyns, S. Rommel,  and S. Kurinec, Accepted (June 2009) for Publication in IEEE Transactions on Electron Devices.

2.          Study of Boron diffusion in MgO in CoFeB|MgO film Stacks using Parallel Electron Energy Loss Spectroscopy, Sankha S. Mukherjee, David MacMahon, Feiming Bai, Chih-Ling Lee, Santosh K. Kurinec, Applied Physics Letters, 94, 082110, 2009.

3.          Crystallization and Grain Growth Behavior of CoFeB and MgO Layers in Multilayer Magnetic Tunnel Junctions, , Sankha S. Mukherjee, David MacMahon, Feiming Bai, Chih-Ling Lee, Surendra Gupta, and Santosh K. Kurinec, (Accepted in J. Appl. Phy., June 2009)

4.          Analyzing Residual Stress in Bilayer Phase Change Memory Films, A. Devasia, F. Bai, S. Gupta, S. Kurinec, M. Davis and K. Campbell, Thin Solid Films, (doi:10.1016/j.tsf.2009.04.017 ) 2009

5.          Record PVCR GaAs-based Tunnel Diodes Fabricated on Si Substrates using Aspect Ratio Trapping, S. Rommel, D. Pawlik, P. Thomas, M. Barth, K. Johnson, S. Kurinec, A. Seabaugh, Z. Cheng, J. Li, J. Park, J. Hydrick, J. Bai, M. Carroll, J. Fiorenza, A. Lochtefeld, International Electron Device Meeting, December 2008

6.          A Stable SPICE Macro-model for Magnetic Tunnel Junctions for Applications in Memory and Logic Circuits, Sankha S. Mukherjee, and Santosh K. Kurinec, IEEE Trans. Magnetics, (Accepted for publication), 2009.

7.          Alloyed junction Ge Esaki diodes on Si substrates realized by aspect ratio trapping technique, Pawlik, D.; Sieg, S.; Kurinec, S.K.; Rommel, S.L.; Cheng, Z.; Park, J.-S.; Hydrick, J.; Lochtefeld, A., Electronics Letters, Vol. 44, Issue 15,  930-931, (2008).

8.          Nanotechnology in education: top-down and bottom-up approach, Mariotti D, Jackson M, Lewis E, Schulte T, Kurinec S,  iNEER Special Volume: Innovations 2008, World innovations in engineering education and research (2008) 261

9.          Optical, Electrical, and Structural Properties of Sputtered Aluminum Alloy Thin Films with Copper, Titanium and Chromium Additions, Lance Barron, Jason Neidrich and Santosh Kurinec, Thin Solid Films, 2006,  515, Issues 7-8, 26 February 2007, Pages 3363-3372

10.      Synthesis and Electrophoretic Deposition of Magnetic Nickel Ferrite Nanoparticles, Santosh Kurinec, Nkiruka Okeke, Surendra Gupta, Heng Zhang, T. Danny Xiao, J. Mater Sci  (2006) 41: 8181-8185.

11.      Cathodic Electrophoretic Deposition of Ceramic Nano-particle Manganese Zinc Ferrite Cody Washburn, Jacob Jorne, and Santosh Kurinec, Electrophoretic Deposition: Fundamentals and Applications II. Edited by A. R. Boccaccini, O. Van der Biest, R. Clasen, Trans Tech Publications, Key Eng. Mater. Vol. 314 (2006). 127-132.

12.      Application of Magnetic Ferrite Electrodeposition and Copper Chemical Mechanical Planarization for On-Chip Analog Circuitry, Cody Washburn, Daniel Brown, Jay Cabacungan, Jayanti Venkataraman and Santosh K. Kurinec, Proc Mat. Res. Soc. Symp. : Materials. Integration and Technology for Monolithic Instruments, pp 157-162, 2005.

13.      Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS Demonstrating Low Voltage MOBILE Operation
S.Sudirgo, R.P. Nandgaonkar, B. Curanovic, J. Hebding, R. Saxer, K.D. Hirschman, S.S. Islam, S.L. Rommel, S.K. Kurinec, P.E. Thompson, N. Jin, and P.R. Berger, Solid State Electronics, vol. 48, 10-11, pp. 1907-1910, Oct.-Nov.,2004.

14.      A 3-Terminal Si-Based Negative Differential Resistance Circuit Element with Adjustable Peak-To-Valley Current Ratios
S. Y. Chung, N. Jin, R. Yu, P. R. Berger, P. E. Thompson, R. Lake, S. Rommel, S. K. Kurinec,  Appl. Phys. Lett., vol. 84 , p. 2688, 2004.

15.      Monolithic Vertical Integration of Si/SiGe HBT and Si-Based Resonant Interband Tunneling Diode Demonstrating Latching Operation and Adjustable Peak-To-Valley Current Ratios (Invited Talk), S. Y. Chung, N. Jin, R. Yu, P. R. Berger, P. E. Thompson, R. Lake, S. Rommel, S. K. Kurinec, International Electron Device Meeting, 2003.

16.      Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes and Their Patterned Growth on PMOS Source/Drain Regions, N. Jin, S.Y. Chung, A.T. Rice, P.R. Berger, R. Yu, P.E. Thompson, C. Rivas, R. Lake, S. Sudirgo, J.J. Kempisty, B. Curanovic, S.L. Rommel, K.D. Hirschman, S.K. Kurinec, P.H. Chi, and D.S. Simons, IEEE Trans. Elec. Dev., vol. 50, pp. 1876-1884, 2003.

17.      Electrophoretic Deposition of Monochrome and Color Phosphor Screens for Information Displays J. Talbot, Esther Sluzky and Santosh K.  Kurinec, , Journal of  Materials Science, 39(3), pp 771-778, February 2004

18.      Unit Cell Indexing of Luminescent Type I Tantalum Zinc Oxide,  Santosh K. Kurinec, Philip Rack, Michael Potter and Tom Blanton, Journal of Materials Research, Vol 15, No. 6, June 2000, p.1320

19.      Enhanced Reliability of Thin Silicon Dioxide Grown on Nitrogen Implanted Silicon, S. Kurinec, M. Jackson, K. Capasso, Mat. Res. Soc. Symp. Proc. Vol. 567, p. 567, 1999.

20.      Negative Ion Re-sputtering in Ta2Zn3O8 Thin Films, Philip D. Rack, Michael D. Potter, Andrew Woodard and Santosh Kurinec, Journal of Vacuum Science and Technology, Vol. 17, No. 5, p. 2805-10, 1999.

21.      A New Material for Thin Film Low Voltage Blue Phosphors, R.J. Langley, G.F. Pettis, S.K. Kurinec and M.D. Potter, Journal of the Society of Information Display, Vol. 6, No. 3, p. 181-4, 1998.

22.      Luminescence Properties of Thin Film Ta2Zn3O8 and Mn Doped Ta2Zn3O8, Philip D. Rack, Michael D. Potter, Santosh Kurinec, Wounjhang Park, John Penczek, Brent K Wagner and Christopher J. Summers, Journal of Applied Physics, Vol. 84, No. 8, p. 4466-70, 1998.

23.      Morphology and Dielectric Properties of Reactively Sputtered AlN Thin Films, A.G. Randolph, S.K. Kurinec, Mat. Res. Soc. Symp:  III-V Nitrides, p. 295-300, Ed. Ponce et al. 1998.

24.      Fabrication of Ultra High Resolution Three Color Phosphor Screens, S.K. Kurinec, E. Sluzky, Journal of the SID, 4/4, p. 1996, 1997.

25.      Porous Microcrystalline Silicon Solar Cells, S.P. Duttagupta, S.K. Kurinec, and P.M. Fauchet, Proc. Mat. Res. Soc. Symp. Advances in Microcrystalline and Nanocrystalline Semiconductors, Vol. 452, p. 625, 1997.

26.      Attenuated Phase Shift Mask Materials for 248 and 193 nm Lithography, B.W. Smith, S. Butt, Z. Alam, S. Kurinec, and R.L. Lane, J. Vac. Sci. Technol. B 14(6), p. 3719, Nov/Dec 1996.

27.      Enhancement and Suppression of the Formation of Porous Silicon, S. P. Duttagupta, C. Peng, P. M. Fauchet, S. Kurinec, and T.N. Blanton, J. Vac. Sci. and Technology, B, Vol 13, p. 1230, May-June 1995.

28.      Micron-size and Submicron-size Light-Emitting Porous Silicon Structures, S. P. Duttagupta, P. M. Fauchet, C. Peng, S. K. Kurinec, K. Hirschman, and T.N. Blanton, Mat. Res. Soc. Symp. Proc., Vol. 358, p. 647, 1995.

29.      Carrier Transport in Porous Silicon Light-Emitting Diodes, C. Peng, P.M. Fauchet, K.D. Hirschman and S.K. Kurinec, Mat. Res. Soc. Symp Proc., Vol. 358, p. 689, 1995.

30.      Ion Implantation of Porous Silicon, C.Peng, P. M. Fauchet, J.M. Rehm, G.L. McLendon, F. Seiferth and S. K. Kurinec, Applied Phy. Lett., Vol 64, No. 10, p. 1259. March 1994.

31.      Light-Emitting Porous Silicon after Standard Microelectronic Processing, C. Peng, L. Tsybeskov, P. M. Fauchet, F. Seiferth, S. K. Kurinec, J.M. Rehm, and G.L. Mclendon, Mat. Res. Soc. Symp.Proc. Vol. 298, p.179, 1993.

32.      Can Oxidation and other Treatments Help us Understand the Nature of Light-Emitting Porous Silicon, P.M. Fauchet, E. Ettedgul, A. Raisanen, L.J. Brillson, F. Seiferth, S.K. Kurinec, Y. Gao, C. Peng and L. Tsybeskov, Mat. Res. Soc. Symp Proc., Vol. 298, p. 271, 1993.

33.      Effect of Heat Treating Gold/Nickel Thin Film Composites in Various Ambients, S. K. Kurinec,.I. Toor, Y. K. Chao, H. Shillingford, and P. Holloway, S. Ray, and K. Beckham, Thin Solid Films, Vol. 162, pp. 247-255, 1988.

34.      Porosity in Thin Film Ni/Au Metallization Layers, Y.K. Chao, S.K. Kurinec, I. Toor, H. Schillingford, and P. H. Holloway, J. Vac. Sci. and Technol. A 5(3), p. 337, 1987.

35.      Electrical Properties of Polycrystalline Silicon and Zinc Oxide Semiconductors, S.N. Singh, S. Kumari (Kurinec) and B. K. Das, Bulletin of Materials Science, Vol. 6, No. 2, 243, May 1984

36.      On the Effective Minority Carrier Diffusion Length of Polysilicon Solar Cells: with S. Kumari (Kurinec), S. K. Jain, B. K. Das, and G. C. Jain, Solar Cells, Vol. 9, p. 209, 1983

37.      Optimum Cost Computation in Photovoltaic Systems with Concentrators, S. Kumari (Kurinec) and G.C. Jain, Solar Cells, Vol. 6, No. 2, p. 149, 1982.

38.      Grain Size Dependence of the Photovoltaic Properties of Solar Grade Polysilicon, S. Kumari (Kurinec), N.K. Arora, and G. C. Jain, Solar Energy Materials, Vol. 5, p. 383, 1981.

39.      On Some Transport Properties of Strontium Doped Lanthanum Chromite Ceramics, K. P. Bansal, S. Kumari (Kurinec), B. K. Das, and G. C. Jain, Journal of Materials Science, No. 18, p. 2095, 1983.

40.      Infrared Spectra of the Ceramic LaCrO3 Doped with Strontium and Titanium, K. P. Bansal, S. Kumari (Kurinec), B. K. Das, and G. C. Jain J. Mater. Sc. Lett., 1, p. 239, 1982.

41.      On the Sintering and Dielectric Properties of the Ceramic La (0.96)Sr(0.04)CrO3, K. P. Bansal, S. Kumari (Kurinec), B. K. Das, and G. C. Jain, Trans. J. Br. Ceram. Soc., 80, p. 215, 1981.

42.      On the Sintering Kinetics of Titania Doped Ceramic Lanthanum Chromite, K. P. Bansal, S. Kumari (Kurinec), B. K. Das, and G. C. Jain, Bull. Mater. Sci., Vol. 3, p. 435, 1981.

43.      Electrical Conduction in Titania Doped Lanthanum Chromite Ceramics, K. P. Bansal, S. Kumari (Kurinec), B. K. Das, and G. C. Jain, J. Mater. Sc., 16, pp. 1994-1998, 1981

44.      Effect of Doping in a Mn-Zn Ferrite with GeO2 and SnO2, G.C. Jain, B.K. Das and Santosh Kumari, IEEE Trans. On Magnetics, Vol. Mag-16, No. 6, pp. 1428-1432, 1980.

45.      On the Origin of Core Losses in an Mn-Zn Ferrite with Appreciable Silica Content, G.C. Jain, B.K. Das and Santosh Kumari, J. Appl. Phys., 49(5), p. 2894, May 1978.

 

Published Conference Proceedings

 

1.          25 Years of Microelectronic Engineering Education, Santosh K. Kurinec, Lynn F. Fuller, Bruce W. Smith, Richard L. Lane, Karl D. Hirschman, Michael A. Jackson, Robert E. Pearson, Dale E. Ewbank, Sean L. Rommel, Sara Widlund, Joan Tierney, Maria Wiegand, Maureen Arquette, Charles Gruener and Scott P. Blondell, 16th Biennial University Government Industry Microelectronics Symposium, San Jose State University, San Jose, CA, June 2006.

2.          Online Master of Engineering Program in Microelectronics Manufacturing Engineering:  A Valuable Resource for Engineers in  Semiconductor Industry, Santosh Kurinec, Dale Ewbank, Daniel Fullerton, Karl Hirschman, Michael Jackson, Robert Pearson, Sean Rommel,  Bru ce Smith and Lynn Fuller , Joeann Humbert, Leah Perlman , Ian Webber, 9th International Conference on Engineering Education, San Juan, Puerto Rico, July 2006, TIA1-5.

3.          Microelectronic Engineering Education for Emerging Frontiers, Santosh Kurinec, Dale Ewbank, Lynn Fuller, Karl Hirschman, Michael Jackson, Robert Pearson, Sean Rommel Bruce Smith and Surendra Gupta Maureen Arquette and Maria Wiegand, 9th International Conference on Engineering Education, San Juan, Puerto Rico, July 2006, TIA1-5.

4.          Quantum and Spin Tunnel Devices for Memory Application
(Invited Talk), S.Sudirgo, S.L. Rommel, and S.K. Kurinec, Proceedings of the 13th International Workshop on The Physics of Semiconductor Devices, p. 678, Dec. 2005.

5.          High Temperature Characterization of Si/SiGe Resonant Interband Tunnel Diodes
D.J. Pawlik, S.Sudirgo, S.L. Rommel, S.K. Kurinec, P.E. Thompson, and P.R. Berger, Proceedings of The 2005 International Semiconductor Device Research Symposium, Dec. 2005.

6.          Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM
S.Sudirgo, D.J. Pawlik, S.L. Rommel, S.K. Kurinec, P.E. Thompson, and P.R. Berger, Proceedings of The 2005 International Semiconductor Device Research Symposium, Dec. 2005. The winner of 2005 Best Student Poster Award.

7.          Overgrown Si/SiGe Resonant Interband Tunnel Diode for Integration with CMOS
S. Sudirgo, R.P. Nandgaonkar, B. Curanovic, R. Vega, K.D. Hirschman, S.L. Rommel, S.K. Kurinec, P.E. Thompson, N. Jin, and P.R. Berger, The Proceedings of 62nd Device Research Conference, pp. 109-110, June 2004.

8.          Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing
S.Sudirgo, R.P. Nandgaonkar, B. Curanovic, J. Hebding, K.D. Hirschman, S.S. Islam, S.L. Rommel, S.K. Kurinec, P.E. Thompson, N. Jin, and P.R. Berger, Proceedings of The 2003 International Semiconductor Device Research Symposium , pp. 22, 2003.

9.          Challenges in Integration of Resonant Interband Tunnel Devices with CMOS
S. Sudirgo, B. Curanovic, S.L. Rommel, K.D. Hirschman, S.K. Kurinec, N. Jin, A.T. Rice, P.R. Berger, P.E. Thompson, Proceedings of the Fifteenth Biennial University/Government/Industry Microelectronics Symposium, pp. 275-278, 2003.

10.      Integration of Silicon- based Tunnel Diodes with CMOS: An RIT-OSU-NRL-NSF Effort, Jeremy J. Kempisty, Karl D. Hirschman, Santosh K. Kurinec, Niu Jin, Sung-Yong Chung, Paul R. Berger, Phillip E. Thompson, 14th Biennial University/Government/Industry Microelectronics Symposium, June  2001, Richmond, VA, p. 74, 2001

11.      AVT-RIT-NSF Partnership for the Development of Low Voltage Thin Film Phosphor for Field Emission Display Devices, S. Kurinec, A. Woodard, P. Rack, and M. Potter, 13th Biennial University/Government/Industry Microelectronics Symposium, June 1999, Minneapolis, MN, p. 73, 1999.

12.      Development and Characterization of 10nm, N2 Implanted Nitrided Oxides, M. Jackson, S. Kurinec and K. Capasso, 13th Biennial University/Government/Industry Microelectronics Symposium, June 1999, Minneapolis, MN, p. 83, 1999.

13.      Materials for Reflective Multilayer Coatings for EUV Wavelengths, Smith, B.W.; Venkataraman, S. Kurinec, S.K.; Mackay, R.S, Source: Proc. SPIE - Int. Soc. Opt. Eng. (USA), 1998.

14.      Rare Earth and Transition Metal Doping of the Ta2Zn3O8 Phosphor for Low Voltage FED Applications, P.Rack, M. Potter, H. Tran and S. Kurinec, Proc. 3rd Intl. Conf. on the Science and Technology of Display Phosphors, San Diego, p. 289, November 1997.

15.      Blue Cathodoluminescence from Tantalum Zinc Oxide, R. Langley, I. Puchades, S.K. Kurinec and M. Potter”, 12th Biennial University/Government/Industry Microelectronics Symposium, June 1999, Rochester, NY, p. 163, July 1997.

16.      Synthesis of Luminescent Tantalum Zinc Oxide, S. K. Kurinec and M.D. Potter, SID Digest, Boston, p. 1077, May 1997.

17.      Tantalum Oxide Thin Films for Microelectronic Applications, Fang-Xing Jian and S.K. Kurinec’ 11th Biennial University/Government/Industry Microelectronics Symposium, Austin, TX, p. 101, June 1995.

18.      Porous Silicon Light Emitting Diodes, C. Peng, S. P. Duttagupta, S. Kurinec, and P. M. Fauchet , Proc. 2nd Conference on Laser and Electro-Optics, Vol. 2, p. 16 , 1994.

19.      Effect of Temperature on Diffusion Length, Spectral Response and Diode Parameters of Polysilicon Solar Cells, N.K. Arora, Santosh Kumari, and S.N. Singh, Proc. National Solar Energy Convention (NSEC), p. 8.037, 1979.

20.      Climatic and Durability Tests on Polycrystalline Silicon Solar Cells, Santosh Kumari, P.V.N. Ramanathan and B.K. Das, Proc. National Solar Energy Convention(NSEC), India, p.278, 1979.

21.      Metallization of Polycrystalline Silicon Solar Cells by Aluminum Silver, Santosh Kumari, S.C. Misra, J. Sebastian, B.P. Nilaratna and B.K. Das, Proc. National Solar Energy Convention(NSEC), India, p. 283, 1979.

 

Major Conference Presentations

 

22.      Undergraduate Co-op Based Concentration Curriculum in MEMs and Nanotechnology, St. Lawrence Chapter of ASEE, Binghamton University, NY, April 8, 2005

23.      Nanotechnology, American Chemical Society- North Eastern Regional Meeting, Rochester, NY, 2004, November 3, 2004

24.      Microelectronics, Nanotechnology and MEMs, Workshop on Nanotechnology and MEMs Education, February 2004

25.      Electrophoretic Deposition of Nanoparticles, Center for Advanced Materials Processing (CAMP ) Clarkson, NY, Symposium, 2003

26.      Directed Assembly of Micro/Nanoparticles by Electrophoretic Deposition, Tech Tran, 2003

27.      Evolution of Data Storage towards Nanotechnology, Annual IEEE Joint Chapters Meeting, 04/10/03

28.      Peer Review Process at NSF- A Reviewer’s Perspective, Seminar given at New Faculty 2000 Seminar, November 15, 2000.

29.      Effective Communication, Leadership and Engineering Workshop for High School Girls at RIT, gave a seminar on, February 1999

30.      The Influence of Oxidation on the Photoluminescence of Porous Silicon, C.Peng, L. Tsybeskov, E. Ettedgui, T. Gao, P.M. Fauchet, S. Kurinec, and L. Blanco, Workshop on Light Emitting Porous Silicon, Munich, Germany, July 1992.

31.      MOS Transistors Fabricated in Silicon Implanted and Annealed LPCVD Polysilicon Thin Films, S. Kurinec, D. Hunt, R. Turkman, VIIth International Symposium on Physics of Semiconductor Devices, New Delhi, December 1991.

32.      Micro-Raman Spectroscopy on Silicon Thin Films, S. Kurinec, Hyun Song and Y.K. Mehra, Fall Symposium on Frontiers in Materials Science: Chemistry and Technology, Rochester, October 1991.

33.      On the Effect of Nitridation of Ti:W Barrier between Al and Si, K. Witt, B. Singh, and S. Kurinec, Fall Symposium on Frontiers in Materials Science: Chemistry and Technology, Rochester, October 1991.

34.      Patterning of Cataphoretically Coated Phosphor Films for High Resolution Color Displays, L. Ternullo and S. Kurinec, Fall Symposium on Frontiers in Materials Science: Chemistry and Technology, Rochester, October 1991.

35.      Silicon Implanted (Amorphized) Polysilicon Films, S. Kurinec, M. Chen and R. Soave, Ninth Biennial University/Government/Indusry Microelectronics Symposium, Melbourne, Florida, June 1991.

36.      Self Implantation of Polysilicon for Thin Film Transistor and Silicon on Insulator Applications, M. Chen and S. Kurinec, IEEE Conference on Electron Devices, Upstate NY Chapter, Rochester, October 1990.

37.      Utilization of Electroluminescence from Avalanche p-n Junction for Optical Testing of Silicon Integrated Circuits, M. Powell, L. Fuller, D.V. Kerns and K. Arora, Eighth Biennial University/Government/Industry Microelectronics Symposium, Westborough, Massachusetts, June 1989

38.      Si Diodes under Avalanche Breakdown as a Light Emitting Source for VLSI Optical Interconnect, D.V. Kerns, K. Arora, S. Kurinec, and W. Power 21st Southeastern Symposium on System Theory, Tallahassee, Florida, March 1989.

39.      Effect of Multiple Heat Treatment on the Morphology and Oxidation of Ni/Au Thin Film Metallization, S. Kurinec, I. Toor and P.H. Holloway, TMS Fall Meeting, Orlando, Florida, October 1986.

40.      The Effect of Grain Boundary Influence Width on the Spectral Response of Polysilicon Solar Cells, Santosh. Kumari and B.K. Das, 17th IEEE Photovoltaic Specialists Conference, Orlando, Florida, May 1984.

41.      A Set-Up for Quantitative Electron Beam Induced Current Studies on Polysilicon Solar Cells using SEM, Santosh Kumari and D. Burk, 15th Annual Conference of Electron Microscope Society, India, 1983.

42.      Evidence for the Grain Boundary Segregation of Impurities in Solar Grade Polysilicon using AES and SIMS, Santosh Kumari, B.K. Das and A. Joshi, 14th Annual Conference of Electron Microscope Society, India, 1982.

43.      Ti Depth Profiling in Bare and Dip AR Coated Silicon using AES, Santosh Kumari, B.K. Das, R. Kumar and A. Banerjee, 14th Annual Conference of Electron Microscope Society, India, 1982.

44.      Second Phase Identification in a Polycrystalline Ferrite using SEM Techniques, Santosh Kumari, B.K. Das,and  G.C. Jain, 13th Annual Conference of Electron Microscope Society, India, 1981

45.      Development of Low Cost Polycrystalline Silicon Solar Cells for Terrestrial Applications, S.N. Singh, Santosh Kumari, and G.C. Jain, Photovoltaic Solar Energy Conference, Cannes, France, pp. 615-619, October 1980.