Ivan Puchades (PhD, Rochester Institute of Technology) joined the Electrical and Microelectronic Engineering department as an Assistant Professor in the fall of 2016. His current research interests include applications of new materials such as carbon nanotubes and other nanomaterials (graphene, 2D metal chalcogenides, phosphorenes, borophene, nanowires, etc.) for lightweight connectors and space structures (antennas and reflectors) as well as collaborations to explore high frequency and sensing applications. He is also interested in exploring blend application of novel nanomaterials and MEMS devices. In 2016, Dr. Puchades completed a two-year IC fellowship with the Chemical Engineering department at Rochester Institute of Technology, under Dr. Brian Landi.
From 2011 to 2014, Dr. Puchades was a Research Assistant Professor at RIT. His research focused on MEMS devices particularly on applications of thermal, electrostatic and piezoelectric MEMS resonators, piezoelectric and beta-voltaic energy harvesting, multi-sensor networks, and system integration. He also taught undergraduate courses in Electrical Engineering and graduate-level Microelectronic Engineering courses in MEMS Design, Fabrication and Test.
From 2000 to 2005 Dr. Puchades worked as an RF device engineer and BiCMOS technology development engineer for Motorola and Freescale Semiconductor in Phoenix, Arizona. He was responsible for CMOS and high-voltage technology integration at the 0.18-µm node and led the resolution of several device engineering issues.
Recent Publications and News
K. Bichave, O. Brewer, M. Gusinov, P. P. Markopoulos and I. Puchades, "Gait Recognition Based on Tensor Analysis of Acceleration Data from Wearable Sensors," 2018 IEEE Western New York Image and Signal Processing Workshop (WNYISPW), Rochester, NY, USA, 2018, pp. 1-5. doi: 10.1109/WNYIPW.2018.8576383
Dr. Ivan Puchades, hosted by Dr. Paulo Lozano, presented at MIT's Space Propulsion Laboratory Seminar on April 23, 2018 his work on "Chemical doping of Carbon Nanotubes and Applications; from Advanced Wires and Cables to Wireless Sensors."
Electrical Transport Degradation of Chemically Doped Electronic-Type-Separated Single-Wall Carbon Nanotubes From Radiation-Induced Defects. Puchades, I., Rossi, J. E., Cox, N. D., Bucossi, A. R., Soule, K. J., Cress, C. D., & Landi, B. J. (2018). IEEE Transactions on Nuclear Science, 65(1), 573-578.
Carbon nanotube wires with continuous current rating exceeding 20 Amperes, CD Cress, MJ Ganter, CM Schauerman, K Soule, JE Rossi, CC Lawlor, I Puchades (2017), Journal of Applied Physics 122 (2), 025101
Modification of Silver/Single-Wall Carbon Nanotube Electrical Contact Interfaces via Ion Irradiation, ND Cox, CD Cress, JE Rossi, I Puchades, A Merrill, AD Franklin, BJ Landi, (2017) ACS Applied Materials & Interfaces 9 (8), 7406-7411
Carbon nanotube thin-film antennas, I Puchades, JE Rossi, CD Cress, E Naglich, BJ Landi, (2016) ACS applied materials & interfaces 8 (32), 20986-20992
Mechanism of chemical doping in electronic-type-separated single wall carbon nanotubes towards high electrical conductivity,I Puchades, CC Lawlor, CM Schauerman, AR Bucossi, JE Rossi, ND Cox, BJ Landi, (2015) Journal of Materials Chemistry C 3 (39), 10256-10266