ELECTRICAL AND MICROELECTRONIC ENGINEERING DEPARTMENT

KATE GLEASON COLLEGE OF ENGINEERING

ROCHESTER INSTITUTE OF TECHNOLOGY

 

Course Outline

Revision Date: 11/29/10

 

 

CATALOG: 0305-704

                   Semiconductor Process & Device Simulation

                   QTR: 102    Registration # 0305 704

 

CREDITS:   4 credits (lecture/lab)

 

PREREQ:    EMCR460 & 560 or equivalent

                   EMCR632/702

 

INSTRUCTOR:    Dr. Karl Hirschman, kdhemc@rit.edu

 

          LAB TA:     Christopher Shea, cgs4706@rit.edu

 

Course Description & Objectives

 

A senior or graduate level course on the application of simulation tools for design and verification of microelectronic processes and operation of semiconductor devices.  The goal of the course is to provide a more in-depth understanding of complex processes and device physics through the use of simulation tools. Technology CAD tools include Silvaco (Athena/Atlas) process/device simulators, as well as other simulation tools for specific processes, and math programs that can be used for custom simulation.

 

The lecture will explore the various models that are used for front-end silicon processes, emphasizing the importance of complex interactions and 2-D effects as devices are scaled deep-submicron.  Laboratory work involves the simulation of various device structures.  One and two dimensional simulation will be used to model the front-end processes (oxidation, diffusion, ion-implant) for diode, BJT and MOS device fabrication.  Electrical device simulation provides the ability to extract device parameters, and explore how changes in the device structure can influence device operation. 

 

Course Topics:

             

            Introduction to numerical simulation

                        - grid/mesh, coupled equations, numerical methods

 

             Silvaco SUPREM-IV process/device simulators

 

             Simulation of BJT & MOS processes

                        - oxidation, diffusion, ion implant

                        - complex interactions, 2-D effects

                        - model calibration

 

             Electrical device simulation

                        - Sub-micron MOS - short channel effects

                        - Advanced models for electrical behavior (i.e. mobility)

 

             Parameter extraction

                        - VT, Leff, S/D resistance, subthreshold characteristics

 

             SPICE models

 

References

 

J.D. Plummer, M.D. Deal and P.B. Griffin, Silicon VLSI Technology Fundamentals, Practice and Modeling, Prentice Hall, 2000.

 

S. Wolf, Silicon Processing for the VLSI Era, Volume 3 The Submicron MOSFET, Lattice Press, 1995.

 

J.J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez, Analysis and Design of MOSFETs Modeling, Simulation and Parameter Extraction, Kluwer, 1998.

 

Silvaco Athena & Atlas manuals

 

 

Schedule & Grades

 

SCHEDULE

Lecture:            M, W, R, F      9-10AM          70-3445

Lab :                ?????              ?????               VLSI lab bldg17 (or other CE lab)

 

GRADING PERCENTAGES:

                        Structured Labs                                                25%

                        Class investigation                                             25%

                        Simulation group projects (2 options)                25%

                        Device Research Project & Report                   25%