ELECTRICAL AND MICROELECTRONIC ENGINEERING DEPARTMENT
ROCHESTER INSTITUTE OF TECHNOLOGY
Revision Date: 11/29/10
Semiconductor Process & Device Simulation
QTR: 102 Registration # 0305 704
CREDITS: 4 credits (lecture/lab)
PREREQ: EMCR460 & 560 or equivalent
LAB TA: Christopher Shea, email@example.com
Course Description & Objectives
A senior or graduate level course on the application of simulation tools for design and verification of microelectronic processes and operation of semiconductor devices. The goal of the course is to provide a more in-depth understanding of complex processes and device physics through the use of simulation tools. Technology CAD tools include Silvaco (Athena/Atlas) process/device simulators, as well as other simulation tools for specific processes, and math programs that can be used for custom simulation.
The lecture will explore the various models that are used for front-end silicon processes, emphasizing the importance of complex interactions and 2-D effects as devices are scaled deep-submicron. Laboratory work involves the simulation of various device structures. One and two dimensional simulation will be used to model the front-end processes (oxidation, diffusion, ion-implant) for diode, BJT and MOS device fabrication. Electrical device simulation provides the ability to extract device parameters, and explore how changes in the device structure can influence device operation.
Introduction to numerical simulation
- grid/mesh, coupled equations, numerical methods
Silvaco SUPREM-IV process/device simulators
Simulation of BJT & MOS processes
- oxidation, diffusion, ion implant
- complex interactions, 2-D effects
- model calibration
Electrical device simulation
- Sub-micron MOS - short channel effects
- Advanced models for electrical behavior (i.e. mobility)
- VT, Leff, S/D resistance, subthreshold characteristics
J.D. Plummer, M.D. Deal and P.B. Griffin, Silicon VLSI Technology – Fundamentals, Practice and Modeling, Prentice Hall, 2000.
S. Wolf, Silicon Processing for the VLSI Era, Volume 3 – The Submicron MOSFET, Lattice Press, 1995.
J.J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez, Analysis and Design of MOSFETs – Modeling, Simulation and Parameter Extraction, Kluwer, 1998.
Silvaco Athena & Atlas manuals
Schedule & Grades
Lecture: M, W, R, F 9-10AM 70-3445
Lab : ????? ????? VLSI lab bldg17 (or other CE lab)
Structured Labs 25%
Class investigation 25%
Simulation group projects (2 options) 25%
Device Research Project & Report 25%